| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory element capable of stably and surely reading information even with low resistance. SOLUTION: The memory element has at least a memory layer 3 and a magnetic fixed layer 1 provided on the memory layer 3 via a nonmagnetic layer. The information is recorded by making a current flow between the memory layer 3 and the fixed layer 1 through the nonmagnetic layer. A reading layer 2 made of a magnetic layer for reading the information from the memory layer 3 is provided between the memory layer 3 and the fixed layer 1. The memory element is constituted such that the reading layer 2 receives a magnetostatic magnetic field or magnetic interaction from the memory layer 3, and spin torque force due to spin polarized electrons works at least between the fixed layer 1 and the reading layer 3. COPYRIGHT: (C)2006,JPO&NCIPI
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