| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory circuit which constitutes a storage circuit including storages on a semiconductor substrate, that can adjust the capability of a suppressor circuit depending on a power supply voltage and a frequency to operate the memory circuit, reduce the adverse effect of the suppressor circuit on power and speed, and reduce areas and design man-hours by devising the mounting method of the circuit to control the capability of the suppressor circuit. SOLUTION: The memory circuit has one or a plurality read ports, one or a plurality write ports, a cross talk glitch suppressor circuit to suppress a cross talk glitch between inner signal lines of each port, and a control means to control the capability of the cross talk glitch suppressor circuit. COPYRIGHT: (C)2006,JPO&NCIPI
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