Method for manufacturing semiconductor device

摘要

A method for manufacturing a semiconductor device includes steps of injecting a hole current into an N drift region while a constant voltage is applied to a P⁺ anode of a lateral insulated gate bipolar transistor, such that a majority of the hole current passes through a P⁺ cathode of the lateral insulated gate bipolar transistor via a P⁺ buried layer. Therefore, a hole-current path located under an N⁺ cathode area of a LIGBT structure is eliminated, thus securing sufficient latch-up current density.