| 摘要 |
A thin film transistor substrate of fringe field switching type and a fabricating method thereof for simplifying a process are disclosed. In the thin film transistor substrate of fringe field switching type, a gate line has a multiple-layer structure and includes a transparent conductive layer. A data line crosses the gate line to define a pixel area. A thin film transistor is connected to the gate line and the data line. A common line is provided in a multiple-layer structure and in parallel to the gate line. A common electrode is formed by an extension of a transparent conductive layer of the common line at said pixel area. A pixel electrode is connected to the thin film transistor to form a fringe field with the common electrode in the pixel area.
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