Plug filling without step-height difference for dual damascene process

摘要

A method for manufacturing a dual damascene structure on a semiconductor substrate is provided. The method includes forming an insulator above the substrate and patterning the insulator to include a plurality of plug openings. A plug-filler material is used for filling one or more of the plug openings and extending above the insulator. A portion of the plug-filler material extending above the insulator can be removed by using a reduced resist coating (RRC) solvent.