发明名称 |
Magnetoresistive element and magnetic memory device |
摘要 |
A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni-Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
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申请公布号 |
US2006146451(A1) |
申请公布日期 |
2006.07.06 |
申请号 |
US20060367483 |
申请日期 |
2006.03.06 |
申请人 |
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发明人 |
INOMATA KOICHIRO;NAKAJIMA KENTARO;SAITO YOSHIAKI;SAGOI MASAYUKI;KISHI TATSUYA |
分类号 |
G11B5/33;G01R33/09;G11B5/127;G11B5/39;G11C11/15;G11C11/16;H01F10/32;H01L21/8246;H01L27/22;H01L43/08 |
主分类号 |
G11B5/33 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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