| 摘要 |
1,132,491. Deposition by transport reaction. SIEMENS A.G. 17 Feb., 1966 [18 Feb., 1965], No. 6909/66. Heading C1A. [Also in Division C7] In a process for the deposition of a monocrystalline layer of semi-conductor material (e.g. silicon or an A III B v compound) from a heated source 7 on a substrate 4 of the same or a different semi-conductor material by means of a gaseous transport reaction, in which a surface layer is first removed from the substrate 4 by reaction with the continuously flowing transport gas at a temperature higher than or equal to the temperature to which the source 7 is heated, the source 7 is at a considerable distance from the substrate 4 during this preliminary reaction and is thereafter brought closer (Fig. 2, not shown) to the substrate which is reduced in temperature in order to start the transport reaction. Doping impurities may be contained in the source 7 or in the transport gas, which may consist of a mixture of hydrogen and/or a halogen and/or a hydrogen halide and/or water vapour with a gaseous compound of the semi-conductor material to be deposited. One or more heating coils 11 may be movable. |
