| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly-oriented diamond film of which the surface is flat and does not contain non-oriented crystals and of which the crystal grain size is large though the film thickness being smaller than that of conventional films, and to provided a method for manufacturing the same, and an electronic device having the highly-oriented diamond. <P>SOLUTION: The highly-oriented diamond film can be provided by depositing a first diamond layer 1 on a substrate 3 by ä111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer 2 on the first diamond layer by ä100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is set to be such that ([C]-[O])/[CH<SB>3</SB>+H<SB>2</SB>+O<SB>2</SB>] is -0.2×10<SP>-2</SP>or more and [O]/[C] is 1.2 or less; and the substrate temperature is over 750°C and under 1,000°C. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
