| 摘要 |
PROBLEM TO BE SOLVED: To provide the data writing method of a magnetic random access memory in which current-magnetic field conversion efficiency can be raised. SOLUTION: In the data writing method of the magnetic random access memory, the followings are provided, i.e., a magnetoresistance effect element having an axis of easy magnetization and an axis of difficult magnetization, first writing wiring which is extended along the direction of the axis of easy magnetization and second writing wiring which is extended along the direction of the axis of difficult magnetization. The method includes a first cycle in which a first current flows in the first writing wiring in a first direction and a second current flows in the second writing wiring in a second direction, a second cycle in which flow of the first current is stopped in the first writing wiring and the second current flows in the second writing wiring in the second direction, and a third cycle in which the first current flows in a third direction that is opposite to the direction of the first direction, in the first writing wiring and the second current flows in the second direction in the second writing wiring. COPYRIGHT: (C)2006,JPO&NCIPI
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