| 摘要 |
A method of forming an LDMOS channel is provided. The method includes forming a conductive epitaxial layer on a semiconductor substrate, forming a photoresist pattern, implanting P-type and N-type ions with a first level of energy by using a tilt implantation method onto the semiconductor substrate, and implanting P-type ions with a second level of energy onto the semiconductor substrate. Accordingly, in an LDMOS channel forming process of the present invention, P-type and N-type ions are implanted using a tilt ion implantation method, and the LDMOS channel formed thereby is not affected by the subsequent P-type ion implantation having a high energy to form a p-body area. Therefore, a threshold voltage that is highly sensitive to a photoresist tilt can be uniformly maintained, and current asymmetry and Gm distortion which may occur due to a tilt difference of the photoresist can be prevented.
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