| 摘要 |
There are provided a method of forming fine patterns in a semiconductor device, and a method of forming a gate with a fine critical dimension using the same. In the method of forming fine patterns in a semiconductor device, a plurality of sidewall buffer patterns are formed on a gate insulating layer formed on a substrate, wherein the plurality of the sidewall buffer patterns are spaced apart from each other by a predetermined distance. A sidewall layer is deposited on the sidewall buffer patterns as well as the gate insulating layer. The sidewall layer is etched such that sidewall patterns remain on sidewalls of the sidewall buffer patterns.
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