| 摘要 |
The invention relates to a so-termed punchthrough diode ( 10 ) with a stack of, for example, n++, n-, p+, n++ regions ( 1,2,3,4 ). In the known diode, these semiconductor regions ( 1,2,3,4 ) are positioned in said order on a substrate ( 11 ). The diode is provided with connection conductors ( 5,6 ). Such a diode does not have a steep I-V characteristic and is therefore less suitable as a TVSD (=Transient Voltage Suppression Device). In particular at voltages below 5 volts, a punchthrough diode could form an attractive alternative as TVSD. In a punchthrough diode ( 10 ) according to the invention, a part of the first semiconductor region ( 1 ) bordering on the second semiconductor region ( 2 ) comprises a number of sub-regions ( 1 A) which are separated from each other by a further semiconductor region ( 7 ) of the second, for example p+, conductivity type which is electrically connected to the first connection conductor ( 5 ). Such a diode has a very steep I-V characteristic, is very suitable as a TVSD and functions very well at an operating voltage below 5 volts. Preferably, the further region ( 7 ) comprises a part ( 7 A) which is wider than the other parts thereof. The regions ( 1,2,3,4 ) may be present in two different orders within a stack positioned on the substrate ( 11 ), each of said orders having certain advantages.
|
