WINDOW PROTECTOR FOR SPUTTER ETCHING OF METAL LAYERS

摘要

An inductively coupled plasma processing apparatus includes a chamber (100) having a top opening. A window (16) seals the top opening of the chamber, and the window has an inner surface that is exposed to an internal region of the chamber. A window protector (20) for protecting the inner surface of the window is disposed within the chamber. The window protector (20) is configured to prevent conductive etch byproducts from being deposited on the inner surface of the window in the form of a continuous loop. In one alternative embodiment, a plurality of window protectors (20') is affixed to the inner surface of the window. In another embodiment, the window has a plurality of T-shaped or dovetail slots formed therein. In yet another embodiment, a plurality of rectangular slots is formed in the window and a window protector having corresponding slots is mounted against the inner surface of the window.