发明名称 |
LATERAL DMOS TRANSISTOR HAVING UNIFORM CHANNEL CONCENTRATION DISTRIBUTION |
摘要 |
<p>A lateral DMOS transistor having a uniform distribution of channel impurity concentration includes a drift region of a first conductivity; a body of a second conductivity, the body being disposed in the drift region and has a channel thereon; and a source region of the first conductivity, the source region being disposed within the body and having an upper region surrounded by a first impurity region of the first conductivity.</p> |
申请公布号 |
KR20060079370(A) |
申请公布日期 |
2006.07.06 |
申请号 |
KR20040117144 |
申请日期 |
2004.12.30 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
LEE, SUK KYUN |
分类号 |
H01L29/78;H01L21/265;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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