FORMING METHOD OF GROUNDING LAYER CONSISTING OF GARIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, AND MANUFACTURING METHOD OF GARIUM NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a GaN-based compound semiconductor layer in which a crystal defect density is low and moreover any piezo spontaneous polarization is hard to occur.

SOLUTION: The method of forming the GaN system compound semiconductor layer comprises the steps of (A) forming on an R plane of a sapphire substrate 10 a plurality of separate seed layers 11 consisting of a GaN-based compound semiconductor; (B) carrying out from each seed layer 11 a longitudinal direction epitaxial growth of a first GaN system compound semiconductor layer 12, in which a crested plane 12A is an A plane and a side view 12B is a C plane; (C) substantially forming a mask layer 13 at the crested plane 12A of the first GaN-based compound semiconductor layer 12 residing at an upper part of the seed layers 11; and (D) carrying out from the crested plane 12A of the first GaN-based compound semiconductor layer 12 a longitudinal direction epitaxial growth of a second GaN-based compound semiconductor layer 14, in which a crested plane 14A is the A plane and a side 14B is the C plane on the crested plane 12A and the mask layer 13 of the first GaN-based compound semiconductor layer 12.

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