| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal where the group III nitride crystal being high quality from its initial growing stage and having a larger size and higher quality than usual can be grown. SOLUTION: In the method for growing the group III nitride crystal, the group III nitride crystal is grown by melting a nitrogen raw material which exists outside a molten liquid 25 where at least an alkali metal, a group III metal raw material and nitrogen are melted in the molten liquid 25. After a step that the concentration of nitrogen dissolving in the molten liquid 25 is controlled to be higher than its saturated concentration is performed, the crystal growth of the group III nitride 26 is started. COPYRIGHT: (C)2006,JPO&NCIPI
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