| 摘要 |
The method is for manufacturing electronic memory devices on a semiconductor substrate including a non-volatile memory matrix and associated circuitry. The method includes forming a first insulation layer, a conductive layer and a second insulation layer. A resist mask is formed corresponding with the memory matrix to define a predetermined geometry in the second insulation layer. The exposed portions of the second insulation layer are isotropically etched. Also, a conformal protective layer is formed and removed via a second highly selective etching step to form portions of the conformal protective layer on side walls of the resist mask and of the insulation layer. A third isotropic etching step removes the insulation layers left exposed by the resist mask and by the portions of the protective layer. The portions of the conformal protective layer and of the resist mask are then removed.
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