| 摘要 |
Disclosed is a method for forming resistors in semiconductor integrated circuit device, comprising the steps of: depositing a pad oxide on a semiconductor substrate; depositing silicon nitride on the pad oxide; depositing photoresist on entire surface of the substrate; transferring patterns of trenches to the photoresist to form photoresist pattern, the patterns of trenches including narrow trenches and active dummy layers sandwiched between neighboring narrow trenches; selectively removing the silicon nitride and pad oxide with using the photoresist pattern as a mask; selectively etching the semiconductor substrate at portions that are exposed by the selectively removed silicon nitride and pad oxide to form trenches including the narrow trenches; forming polysilicon lines on the narrow trenches; and forming metal contacts to off-edges of the polysilicon lines.
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