发明名称 Method for manufacturing semiconductor device having a pair of heat sinks
摘要 A semiconductor device includes a heater element; a first heat sink disposed on one side of the heater element; a second heat sink disposed on the other side of the heater element; and a resin mold for molding the heater element and the first and second heat sinks. The first heat sink includes a first heat radiation surface, which is disposed opposite to the heater element and exposed from the resin mold. The second heat sink includes a second heat radiation surface, which is disposed opposite to the heater element and exposed from the resin mold. The first and second heat radiation surfaces have a degree of parallelism therebetween equal to or smaller than 0.2 mm.
申请公布号 US2006145335(A1) 申请公布日期 2006.07.06
申请号 US20060365674 申请日期 2006.03.02
申请人 DENSO CORPORATION 发明人 TESHIMA TAKANORI;NAKAZAWA SHUSAKU
分类号 H01L23/29;H01L23/34;H01L21/48;H01L23/433;H01L25/07 主分类号 H01L23/29
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