| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a variation of a threshold voltage of a miniaturized MISFET. <P>SOLUTION: The gate electrode 9a of an MISFET (Q<SB>1</SB>) is formed on the substrate 1 of an active region L, whose circumference is specified by an element isolation groove 2, and extending from one end to the other across the active region L. The gate electrode 9a is composed of an H-shaped plane pattern as a whole, whose gate length in the border region of the active region L and element isolation groove 2 is larger than that in the center section of the active region L. Further, the gate electrode 9a covers the whole one side along the direction of the gate length of the border region of the active region L and element isolation groove 2 and part of two sides along the direction of the gate width. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
