| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a proximity X-ray exposure method and an exposure device wherein under cut and droop of resist are not generated even in a short wavelength, and a side wall of the resist is vertical. <P>SOLUTION: If halogenide such as Br is put in resist and absorption of X-ray is enlarged, the difference of energy amount provided from a substrate to the resist is reversed before and behind an absorption end of the substrate. Accordingly, the absorption end of the substrate is made to be between the shortest wavelength and the longest wavelength of exposure wavelength and is exposed by X-ray of a proper wavelength region, thus making a secondary electron amount from the substrate 0 by appearance. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
