| 发明名称 |
FERROELECTRIC MATERIAL, METHOD OF MANUFACTURING THE SAME AND FERROELECTRIC MEMORY |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ferroelectric material containing no lead and showing residual dielectric polarization nearly equal to that of PZT and a method of manufacturing the same. <P>SOLUTION: A precursor solution of BiFeO<SB>3</SB>is applied on the surface of a base member. After the application, a heat treatment is carried out to obtain a dielectric film. The dielectric film is heated under a non-oxidizing atmosphere to be crystallized. As a result, the ferroelectric material containing Bi, Fe and O as structural elements and having a tetragonal or orthorhombic crystal lattice is obtained. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
| 申请公布号 |
JP2006176366(A) |
申请公布日期 |
2006.07.06 |
| 申请号 |
JP20040371905 |
申请日期 |
2004.12.22 |
| 申请人 |
FUJITSU LTD;TOKYO INSTITUTE OF TECHNOLOGY |
发明人 |
KONDO MASAO;MARUYAMA KENJI;UENO RISAKO;FUNAKUBO HIROSHI;UCHIDA HIROSHI;KODA SEIICHIRO;NAKAGI HIROSHI |
| 分类号 |
C04B35/00;H01B3/00;H01B3/12;H01L21/8246;H01L21/8247;H01L27/105;H01L29/788;H01L29/792 |
主分类号 |
C04B35/00 |
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