| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a means for thinning the thickness of a WCSP-type semiconductor device having electrodes. <P>SOLUTION: The semiconductor device has a semiconductor substrate 2 having a first surface and a second surface opposed to the first surface, an electrode pad 5 disposed on the first surface of the semiconductor substrate 2 and connected electrically with circuit elements formed on the first surface of the semiconductor substrate 2, a first metal layer formed on the electrode pad 5, a wiring layer formed on the first metal layer, a protective layer 6 for sealing the side of the first surface of the semiconductor substrate 2, an opening formed in the protective layer 6 and for exposing to the external portion of the wiring layer, and an electrode formed on the opening portion and connected with the portion of the exposed wiring layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
