| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent degradation due to stress in a nitride-based group III-V compound semiconductor light-emitting device using a nitride-based group III-V compound semiconductor as a substrate, and to improve its service life. <P>SOLUTION: The method is used to prevent the degradation of a semiconductor light-emitting device using a nitride-based group III-V compound semiconductor as a substrate. In this case, the strain of each of multilayer structure layers grown on the substrate is controlled. In concrete, the substrate of the semiconductor light-emitting device is made to be 65-500 μm in thickness, and mounting temperature is set to between 190-260°C, and then the semiconductor light-emitting device is mounted by a junction-up method or junction-down method. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
