| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a boron nitride thin film containing boron nitride crystal with a pointed tip with excellent field electron emission properties, and an emitter of high efficiency with a low field electron emission threshold value through a proper control of a distribution state of crystal, in an emitter design with the thin film. <P>SOLUTION: In designing a boron nitride thin film emitter containing sp<SP>3</SP>-bonding and sp<SP>2</SP>-bonding boron nitride or their mixture thereof, and crystal with a shape of a pointed tip and excellent in field electron emission properties as expressed in general formula BN, a distribution state of the crystal on the thin film surface is controlled by regulating angles of substrates against flow of reaction gas, in depositing emitters by reaction from a gas phase. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
