发明名称 SEMICONDUCTOR POWER MODULE
摘要 <p><P>PROBLEM TO BE SOLVED: To improve thermal fatigue life and moisture resistance of a solder connection part of a resin sealed semiconductor power module. <P>SOLUTION: In the semiconductor power module, a Si chip is mounted on an insulating substrate where high grade Al or Al alloy is directly brought into contact with a ceramic substrate so as to bond them through solder. The Si chip and the insulating substrate are sealed with epoxy resin whose coefficient of linear expansion is 10×10<SP>-6</SP>to 40×10<SP>-6</SP>/°C, whose Young's modulus is 3 to 20 GPa and whose glass transition temperature Tg is 150°C or above. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006179732(A) 申请公布日期 2006.07.06
申请号 JP20040372483 申请日期 2004.12.24
申请人 HITACHI LTD 发明人 SOGA TASAO;KAWASE DAISUKE;TANAKA CHIKARA;MORIZAKI HIDEKAZU;SUZUKI KAZUHIRO
分类号 H01L23/12;H01L23/28 主分类号 H01L23/12
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