| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element capable of laser oscillation and its manufacturing method which manufactures it without the melt sticking. SOLUTION: The semiconductor laser element 1 comprises an active layer 5 for emitting light by injecting carriers, an electrode 10 formed on a light radiating surface 9, a photonic crystal area existing on other region than just beneath the electrode 10 for diffracting light generated in the active layer 5 and emitting light in the vertical direction to the light radiating surface 9a, and a light emitting area just beneath the electrode 10. The photonic crystal area has a laminate surface and a plurality of holes 2a provided to form a two-dimensional diffraction lattice, and the plurality of holes 2a extend up to the light radiating surface 9a. The light emitting area has no plurality of holes and its in-surface length is an integer or half-integer multiple of the wavelength of a standing wave generated on the photonic crystal area. COPYRIGHT: (C)2006,JPO&NCIPI |
