| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a substrate integrated with thin film capacitors which is configured in such a way that the thin film capacitors are formed on the substrate by making at least one thin film capacitor consisting of a lower electrode layer, a dielectric layer and an upper electrode, and laminating other thin film capacitor on it, wherein a filled via for connecting layers mutually can be formed certainly and easily by solving a problem of electrical connection failure of the filled via caused at the time of forming the filled via. <P>SOLUTION: The substrate integrated with the thin film capacitors which are formed as the plural layers, is configured in such a way that the thin film capacitors are formed on the substrate 1 by making at least one thin film capacitor consisting of the lower electrode layer 5, the dielectric layer 8 and the upper electrode 11, and laminating other thin film capacitor on it. An insulator layer is formed which covers the respective thin film capacitors resulting in formation of its smooth surface, and the filled via 15 penetrating through the insulator layer is provided which connects perpendicularly the upper electrode 11 of the thin film capacitor with other thin film capacitor of an upper floor layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
