| 摘要 |
A trench transistor and method of making a trench transistor is disclosed. In one embodiment, the trench transistor has a semiconductor body in which a plurality of cell array trenches separated from one another by mesa regions are formed. Electrodes are embedded in the cell array trenches. A source region, a body region and also a body contact region are in each case provided in the mesa regions. The electrodes of a plurality of cell array trenches are at source potential. At least some body contact regions are embodied in the form of a layer which forms at least one part of an upper region of the inner wall of a cell array trench, the electrode of which is at source potential, and whose horizontal extent is less than half of the horizontal extent of a mesa region.
|
