发明名称 Methods of operating integrated circuit memory devices
摘要 Methods of operating an integrated circuit memory device include providing a first address and a first command to the memory device and executing the first command within the memory device. This step of executing the first command is performed concurrently with providing at least one of a second address and a second command to the memory device prior to terminating execution of the first command. This providing of at least one of the second address and the second command prior to termination execution of the first command improves timing efficiency by reducing delay associated with execution of each new command.
申请公布号 US2006149912(A1) 申请公布日期 2006.07.06
申请号 US20050321610 申请日期 2005.12.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MA SUNG-HUN
分类号 G06F13/28 主分类号 G06F13/28
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