| 摘要 |
A method for manufacturing a semiconductor device reduces or prevents copper contamination. The method includes forming a gate electrode on a substrate; forming a first oxide layer on a front surface of the substrate including the gate electrode; depositing a nitride layer (simultaneously) on the first oxide layer and a rear surface of the substrate; depositing a second oxide layer on the nitride layer; removing the second oxide layer from the rear surface of the substrate; and forming spacers at sides of the gate electrode by etching the second oxide layer, the nitride layer, and the first oxide layer.
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