| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an extreme ultraviolet (EUV) mask which is formed through processes of forming a first multilayered film 1-(1) that serves as a highly reflective part to exposure light and a first protective film 2-(1) on a board 5, providing a second multilayered film 1-(2) that serves as another highly reflective part and a second protective film 2-(2) thereon, and forming a pattern using an intermediate film 3 interposed between the first protective film 2-(1) and the second multilayered film 1-(2) and in which the phase difference and strength of the reflected light are precisely determined corresponding to the material of an intermediate layer 3. <P>SOLUTION: The thickness of the intermediate film 3 is set so as to make the reflectance of the first multilayered film 1-(1) and the first protective film 2-(1) equal to that of the second multilayered film 1-(2) and the second protective film 2-(2), and to make a phase difference between the reflected light from the first multilayered film 1-(1) and the first protective film 2-(1) and the other reflected light from the second multilayered film 1-(2) and the second protective film 2-(2) equal to an angle of 180° based on the properties as to the above reflectance and phase difference to the thickness of the intermediate layer 3. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
