| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of reducing the power consumption in the case of sweeping out smear electric charges at a high speed. SOLUTION: The solid-state imaging apparatus comprises: a solid-state image sensor including a well formed in a semiconductor substrate, electric charge storage regions arranged in the well in a matrix form and storing signal electric charges obtained by photoelectric conversion to an incident light, a plurality of vertical transfer channels formed close to each column of the electric charge storage regions to be extended in the columnar direction as a whole, vertical transmission electrodes formed above them, reading the signal electric charges stored in the electric charge storage regions to the vertical transfer channels, transferring produced smear electric charges in the columnar direction, and transferring the electric charges transferred from the vertical transfer channels in the horizontal direction; and a drive section that outputs two voltages with a first difference when transferring the signal electric charges read from the electric charge storage regions to the vertical transfer electrodes and outputs two voltages with a second difference smaller than the first difference when transferring the smear electric charges. COPYRIGHT: (C)2006,JPO&NCIPI
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