MANUFACTURING METHOD OF MICROSTRUCTURE

摘要

PROBLEM TO BE SOLVED: To realize a sacrificial layer of silicon oxide film having a large etching rate in a manufacturing process of microstructures. SOLUTION: A plasma space under approximate normal pressure is formed by a pair of electrodes. Mixed gas of TMOS and nitrogen is sprayed to a substrate for microstructures without going through the plasma space, and oxygen is sprayed to the substrate with going through the plasma space to contact with the mixed gas on the substrate. Each gas flow rate is 0.26 g/min for TMOS, 10 slm for nitrogen, and 10 slm for oxygen, and does not contain moisture. COPYRIGHT: (C)2006,JPO&NCIPI