发明名称 CMOS image sensor and method for fabricating the same
摘要 A CMOS image sensor and a method for fabricating the same provides a microlens pattern profile with a rectangular shape to facilitate a reflow process of a microlens and improve its curvature, thereby improving concentration efficiency of light and improving characteristics of the image sensor. The CMOS image sensor includes a plurality of photodiodes arranged on a semiconductor substrate; a plurality of color filters disposed in correspondence to the photodiodes; a planarization layer formed on the entire surface of the semiconductor substrate including the color filters; first microlenses having a rectangular shape formed on the planarization layer to correspond to the photodiodes; and second microlenses formed to surround the first microlenses.
申请公布号 US2006145197(A1) 申请公布日期 2006.07.06
申请号 US20050319262 申请日期 2005.12.29
申请人 BAEK SEOUNG W 发明人 BAEK SEOUNG W.
分类号 H01L29/768 主分类号 H01L29/768
代理机构 代理人
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