| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of producing a minute electromechanical device in which a high-performance minute electromechanical element and a high-performance integrated circuit are integrated. <P>SOLUTION: In producing the minute electromechanical device integrating a gyro sensor S as the minute electromechanical element and the integrated circuit 3, a silicon substrate 1A as a semiconductor substrate is arranged, and a silicon layer 1B having a resistivity higher than that of the silicon substrate 1A is formed on one surface of the silicon substrate 1A, and then the integrate circuit 3 is formed on the silicon layer 1B. Thereafter part of the silicon layer 1B on the silicon substrate 1A, that overlaps an area in which the gyro sensor S is to be formed, is removed, and the silicon substrate 1A is machined, to thereby form a three-dimensional structure forming a most part of the gyro sensor S. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
