| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of writing to a memory transistor while preventing the damage to a peripheral circuit gate oxide film. <P>SOLUTION: The semiconductor device 1 comprises the memory transistor having a memory gate oxide film 15 formed on the semiconductor substrate 1, and a floating gate 17 consisting of an electrically floating polysilicon formed on the memory gate oxide film 15; a non-volatile memory cell comprising a selecting transistor having a selecting gate oxide film 11 formed on the semiconductor substrate 1, and a selecting gate 13 consisting of polysilicon formed on the memory gate oxide film 11 and connected in series to the memory transistor; and a peripheral circuit transistor having the peripheral circuit gate oxide film 23 formed on the semiconductor substrate 1, and a peripheral circuit gate 25 consisting of polysilicon formed on the peripheral circuit gate oxide film 23. The thickness of the memory gate oxide film 15 is smaller than that of the peripheral circuit gate oxide film 23. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
