发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND MANUFACTURING DEVICE FOR SEMICONDUCTOR
摘要 <p><P>PROBLEM TO BE SOLVED: To control the phase state of a polishing object so as to be under a state optimum to chemical and mechanical polishing employing a substance capable of controlling the oxidizing power in accordance with a necessary oxidizing power. <P>SOLUTION: The chemical and mechanical polishing is effected so as to be optimum in a polishing accuracy, an efficiency or the like by controlling a polishing object in the optimum phase state for the chemical and mechanical polishing. For example, electrolytic ion water is employed together with abrasive grains and a pH adjusting material as an oxidation and reduction potential adjusting material. Consequently, the phase state of a polishing object such as tungsten or the like is maintained at 1.4 V of oxidation and reduction potential within the range of high acidities to effect the chemical and mechanical polishing, by controlling the tungsten in the phase state of solid state of WO<SB>3</SB>wherein the stabilized polishing of tungsten is permitted. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006179647(A) 申请公布日期 2006.07.06
申请号 JP20040370634 申请日期 2004.12.22
申请人 RENESAS TECHNOLOGY CORP 发明人 KAWAI AKINARI;TSUCHIYAMA YOJI
分类号 H01L21/304;B24B37/00 主分类号 H01L21/304
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