| 摘要 |
PROBLEM TO BE SOLVED: To obtain a resist pattern having a preferable profile while preventing inclination or collapse of the resist pattern. SOLUTION: After a chemical amplification resist is applied on a semiconductor substrate 10 to form a resist film 11, the resist film 11 is irradiated with ArF excimer laser light 13 through a mask 12 for pattern exposure, and the pattern exposed resist film 11 is heated (PEB: post exposure baking). Subsequently, after the resist film 11 is developed with an alkaline developing solution 14, an alkaline rinse liquid 17 is supplied onto the resist film 11 to form a resist pattern comprising an unexposed portion 11b of the resist film 11. COPYRIGHT: (C)2006,JPO&NCIPI |
