| 摘要 |
According to the present invention, there is provided a semiconductor device including a MOSFET, comprising: a second-conductivity-type semiconductor layer selectively formed in one surface portion of a first first-conductivity-type semiconductor layer; a second first-conductivity-type semiconductor layer selectively formed in a surface portion of said second-conductivity-type semiconductor layer; a first main electrode electrically connected to said second first-conductivity-type semiconductor layer and second-conductivity-type semiconductor layer; a second main electrode electrically connected to the other surface of said first first-conductivity-type semiconductor layer; and a control electrode formed on the surfaces of said second first-conductivity-type semiconductor layer, second-conductivity-type semiconductor layer, and first first-conductivity-type semiconductor layer via an insulating film, and a junction between said second main electrode and first first-conductivity-type semiconductor layer is a Schottky contact.
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