发明名称 EDGE REMOVAL OF SILICON-ON-INSULATOR CONVEYANCE WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method for polishing a silicon-on-insulator conveyance wafer with a front surface having a peripheral lip around a circular groove. SOLUTION: In one version, a circular groove on a wafer's front surface is masked by filling the groove with spin-on glass. Although masking is done on the circular groove using the spin-on glass, the wafer's front surface is exposed to an etchant, which etches the peripheral lip preferentially. The spin-on glass is removed and the conveyance wafer's front surface is polished. Another method of removing the peripheral lip includes the steps of applying still higher pressure onto the peripheral lip in the polishing process, and sending a pressurization liquid jet to the bottom part of the peripheral lip. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006179887(A) 申请公布日期 2006.07.06
申请号 JP20050342585 申请日期 2005.11.28
申请人 APPLIED MATERIALS INC 发明人 DONOHOE RAYMOND J;VEPA KRISHNA;MILLER PAUL V;RAYANDAYAN RONALD;WANG HONG
分类号 H01L21/304;B24B1/00;H01L27/12 主分类号 H01L21/304
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