| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for efficiently producing a crystalline SiC film with low resistivity, at a low substrate temperature of about 500°C or lower. SOLUTION: This production method for depositing the crystalline SiC film on a substrate comprises controlling the substrate temperature to 500°C or lower and preferably to 300°C or lower; and doping nitrogen into the film by using preferably a silazane. It is preferable to employ a CVD method in order to deposit the film, and further preferably to employ a catalytic CVD method. The silazane includes hexamethyl disilazane, hexaethyl disilazane, heptamethyl disilazane and divinyltetramethyl disilazane. COPYRIGHT: (C)2006,JPO&NCIPI
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