| 摘要 |
A method for implanting ions into a workpiece, such as a semiconductor wafer, includes generating an ion beam, providing a workpiece support surface to support a workpiece during ion implantation, deflecting the ion beam to provide a desired incidence angle of the deflected ion beam relative to the workpiece support surface, and performing an implant with the ion beam deflected at the desired incidence angle relative to the workpiece support surface. The incidence angle may be measured, and the beam deflection may be adjusted based on a comparison of the measured incidence angle and the desired incidence angle.
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