| 摘要 |
An improved diode is disclosed. The diode comprises a Schottky diode and a LDMOS device coupled in series with the Schottky diode. In a preferred embodiment, a forward current from the Schottky diode is allowed to flow through the channel of a depletion mode LDMOS that allows gate control over Schottky forward current. Integrating the Schottky diode into the drain of the depletion mode LDMOS forms the device structure.
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