| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element devised so that the conductivity of a transparent electric conductive film may not be lowered and a manufacturing method for it, also in the annealing treatment when attaining the adhesion and ohmic contact of a metal thin film. <P>SOLUTION: The junction interface of n-type and p-type semiconductor layers 1 and 2 are made an light emitting part. In the semiconductor light emitting element which emits light via a transparent electric conductive film 3 from the light emitter, the transparent electric conduction film 3 contains gallium in the region which approaches most closely to the semiconductor layer 2 at least while being laminated on the semiconductor layer 2. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
