LIGHT RECEIVING ELEMENT, ITS MANUFACTURING METHOD, SOLID-STATE IMAGING ELEMENT, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a solid-state imaging element capable of securing a sufficient S/N ratio by reducing noise due to dark current. SOLUTION: The solid-state imaging element 1 having a photoelectric conversion element PD is formed in a semiconductor layer 11, and a single crystal layer 25 made of a material with a wider bandgap than the semiconductor layer 11 is formed at least on a region of the layer 11 where the photoelectric conversion element PD is formed. COPYRIGHT: (C)2006,JPO&NCIPI