CMOS SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To demonstrate the performance of a p-type MOSFET to the maximum extent while controlling the leakage current of an n-type MOSFET in a semiconductor device provided with the n-type MOSFET and the p-type MOSFET. SOLUTION: At the time of forming an n-type MOSFET 118 and a p-type MOSFET 120 in the inside of the region which operates with the same supply voltage, a gate insulating layer 106a of the n-type MOSFET 118 is made thicker than the thickness of a gate insulating layer 106b of the p-type MOSFET 120. COPYRIGHT: (C)2006,JPO&NCIPI