| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device which defines a shield film at a high accuracy with keeping it thinned and without needing an excessively high accuracy of bonding layers one above another beyond necessary. SOLUTION: The solid-state imaging device comprises a photoelectric converter, a charge transfer unit having charge transfer electrodes for transferring the charge generated by the photoelectric converter, an antireflective film covering the photoelectric converter, and a shield film formed to cover the photoelectric converter and the charge transfer electrodes, except a light receiving area. The antireflective film is formed so as to avoid superposing it on the charge transfer electrode upside. COPYRIGHT: (C)2006,JPO&NCIPI
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