发明名称 |
THIN FILM TRANSISTOR, FLAT PANEL DISPLAY EQUIPPED THEREWITH, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF FLAT PANEL DISPLAY |
摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor, a flat panel display equipped with the thin film transistor, a method of manufacturing the thin film transistor, and a method of manufacturing the flat panel display. SOLUTION: The thin film transistor comprises a gate electrode, source and drain electrodes which are insulated from the gate electrode, and an organic semiconductor layer which is insulated from the gate electrode and is contacted with the source and drain electrodes respectively. The organic semiconductor layer is provided around at least a channel area with a denaturation region in which at least a crystal structure thereof is distinct from other parts and is degenerated. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006179855(A) |
申请公布日期 |
2006.07.06 |
申请号 |
JP20050190559 |
申请日期 |
2005.06.29 |
申请人 |
SAMSUNG SDI CO LTD |
发明人 |
YANG NAM-CHOUL;KIN KEITO;SUH MIN-CHUL;KOO JAE-BON;LEE SANG-MIN;LEE HUN-JUNG |
分类号 |
H01L29/786;H01L21/336;H01L21/762;H01L51/05;H01L51/50;H05B33/10 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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