发明名称 |
Methods for forming DRAM devices including protective patterns and related devices |
摘要 |
A first interlayer dielectric is formed on a semiconductor substrate. A contact pad is formed to contact the substrate through the first interlayer dielectric. A bitline is formed on the first interlayer dielectric not to contact the contact pad. A second interlayer dielectric is formed and planarized to expose the top of the bitline. A protective layer is formed an entire surface of the resultant structure. A sacrificial layer is formed on the protective layer. The sacrificial layer, the protective layer, and the second interlayer dielectric are patterned between two adjacent bitlines to form a bottom electrode contact hole exposing the contact pad. A conductive layer is formed and planarized to form a bottom electrode contact plug filling the bottom electrode contact hole.
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申请公布号 |
US2006146595(A1) |
申请公布日期 |
2006.07.06 |
申请号 |
US20060327067 |
申请日期 |
2006.01.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HONG JONG-SEO;SEO JUNG-WOO;HONG JUN-SIK;JEON JEONG-SIC |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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地址 |
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